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Untitled Document
 
자료 업데이트 :
Type P  N  Intrinsic FZ P FZ N
Orientation 100  110  111  
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전체 건
2" Semiconductor Wafers
Diameter
(mm)		 Grade Type Dopant Orientation Resistivity
(Ωcm) 		Thickness
(μm)		 Surface Flat /
Notch		 Stock Lead
Time 		Remark
50.8mm Test P Boron 100 1-20 280 P/E 1 Flat 500 2일 2PT
50.8mm Prime P Boron 100 1-10 280 P/E 1 Flat 100 2일 2PP1
50.8mm Prime N Phosphorus 100 1-10 280 P/E 1 Flat 200 2일 2VNP
50.8mm Prime P Boron 100 0.01-0.02 280 P/E 2 Flats 25 7일 2PPR
50.8mm Prime N Antimon 100 0.01-0.02 300 P/E 2 Flats 25 7일 2PNR
50.8mm Prime Intrinsic - 111 FZ 7,000-20,000 300 P/E 1 Flat 25 7일 2IN111
50.8mm Prime FZ P Boron 111 FZ >1,000 280 P/E 1 Flat 25 7일 2PFZ111
50.8mm Prime FZ N Phosphorus 100 FZ >2,000 280 P/P 1 Flat 25 7일 2NFZ100
3" Semiconductor Wafers
Diameter
(mm)		 Grade Type Dopant Orientation Resistivity
(Ωcm) 		Thickness
(μm)		 Surface Flat /
Notch		 Stock Lead
Time 		Remark
76.2mm Test P Boron 100 1-20 380 P/E 1 Flat 1000 2일 3PT
76.2mm Prime P Boron 100 0.001-0.005 380 P/E 2 Flats 25 7일 3PPR
76.2mm Prime P Boron 100 1-10 380 P/E 1 Flat - 7일 3PP1
76.2mm Prime N Phosphorus 100 10-15 380 P/E 2 Flats 25 7일 3NP10
76.2mm Prime N Antimony 100 0.008-0.020 380 P/E 2 Flats 25 7일 3NPR
76.2mm Prime N Arsenic 111-0.5 0.001-0.004 380 P/E 2 Flats 25 7일 3NPR111
76.2mm FZ P Boron 111 FZ>9,000 625 P/P 1Flat 11 7일
76.2mm FZ N Phosphorus 111 FZ 5,000 380 P/P 1 Flat 25 7일
4" Semiconductor Wafers
Diameter
(mm)		 Grade Type Dopant Orientation Resistivity
(Ωcm) 		Thickness
(μm)		 Surface Flat /
Notch		 Stock Lead
Time 		Remark
100mm Test P Boron 100 1-20 525 P/E 1 Flat 350 2일 0.3um 10EA
100mm Test P Boron 100 1-20 525 P/E 1 Flat 1500 2일 0.3um 30EA
100mm Prime P Boron 111 1-10 525 P/E 1 Flat 400 2일 4PP111
100mm Prime P Boron 110 1-10 750 P/E 1 Flat 25 2일 4P 110 750
100mm Prime P Boron 100 0.001-0.003 525 P/E 1 Flat 1000 2일 0.3um 10EA
100mm Prime P Boron 100 1-10 525 P/E 1 Flat 1000 2일 0.3um 10EA
100mm Prime P Boron 100 1-10 525 P / P 1 Flat - 2일 4PPD
100mm Prime N Phosphorus 100 0.001-0.003 525 P/E 1 Flat 500 2일 0.3um 10EA
100mm Prime N Phosphorus 110 1-10 525 P/E 1 Flat 200 2일 4NP110
100mm Prime N Phosphorus 111 1-10 525 P/E 1 Flat 200 2일 4PN111
100mm Prime N Phosphorus 100 1-10 525 P/E 1 Flat 1000 2일 4NP1
100mm Prime P Boron 100 ≤0.005 525 P/E 1 Flat 100 4일 4PP 0.005
100mm Prime N Arsenic 100 ≦0.005 525 P/E 1 Flat 100 4일 0.3um 15EA
100mm Prime P Boron 100 1-10 1,000 P/E 1 Flat 25 7일 4PP1T
100mm Prime P Boron 100 0.5-1.0 525 P/E 2 Flats 25 7일 4PP0.5
100mm Prime P Boron 110 5-10 525 P/E 1 Flats 25 7일 4PP110
100mm Prime N Phosphorus 111 FZ 1,000-2,000 380 P/E 1 Flat 25 7일 4NFZ111
100mm Prime Intrinsic - 111 FZ 20,000~50,000 380 P/E 1 Flat 25 7일 4IN111
100mm FZ N Phosphorus 100 FZ >1,000 525 P/E 2 Flats 17 7일 4NFZ100
5" Semiconductor Wafers
Diameter
(mm)		 Grade Type Dopant Orientation Resistivity
(Ωcm) 		Thickness
(μm)		 Surface Flat /
Notch		 Stock Lead
Time 		Remark
125mm Test P Boron 100 1-10 625 P/E 1 Flat 50 7일 5PT111
125mm Prime P Boron 100 1-30 625 P/E 1 Flat 25 7일 Test down
125mm Prime N Arsenic 100 0.001-0.007 625 OxP/EOx 2 Flats 200 7일 5NPR
125mm Prime FZ N Phosphorus 100 FZ 5,000-10,000 350 P/E 1 Flat 25 7일 5NFZ
6" Semiconductor Wafers
Diameter
(mm)		 Grade Type Dopant Orientation Resistivity
(Ωcm) 		Thickness
(μm)		 Surface Flat /
Notch		 Stock Lead
Time 		Remark
150mm Test P Boron 100 1-30 675 P/E 1 Flat 500 2일 6PT
150mm Prime P Boron 100 1-10 675 P/E 1 Flat 300 2일 6PP
150mm Prime P Boron 100 <0.005 675+/-25 P/E 1 Flat 100 2일 6PP 0.005
150mm Prime N Arsenic 100 <0.005 675+/-25 P/E 1 Flat 100 2일 6NP 0.005
150mm Prime N Ph 100 4-6 675+/-20 SSP 1 Flat 100 4일
150mm SOI P-type,N-Type B, P 100 10-20,1-4 625, 1, 2.5 SSP S 1 Flat 100 7일 HD,Ox,Ly
150mm Prime P Boron 100 20-60 635 OxP/EOx 1 Flat 40 7일 6PPOx
150mm Prime N As 100 <0.005 675 OxP/EOx 1 Flat 25 7일 6NPR
150mm prime FZ N Phosphorus 100 FZ >3,000 575 P/E 1 Flat 25 7일 6NFZ
8" Semiconductor Wafers
Diameter
(mm)		 Grade Type Dopant Orientation Resistivity
(Ωcm) 		Thickness
(μm)		 Surface Flat /
Notch		 Stock Lead
Time 		Remark
200mm Test P Boron 100 3-30 725 P/E 1 Flat 50 2일 8PTF
200mm Test P Boron 100 8-25 705-745 P/E Notch 150 4일
200mm Test P Boron 100 3-25 725 P / P 1 Flat 100 4일
200mm Reclaim Test P Boron 100 8-25 650-710 P/E 1 Flat 150 4일
200mm Prime P Boron 100 8-12 725 P/P 1 Flat 50 4일 8PP
200mm Prime N Phosphorus 100 1-10 725 P/E Notch 25 7일
200mm Prime FZ N Phosphorus 100 2,000-6,000 725 P/E Notch 50 7일 FZ 2000
12" Semiconductor Wafers
Diameter
(mm)		 Grade Type Dopant Orientation Resistivity
(Ωcm) 		Thickness
(μm)		 Surface Flat /
Notch		 Stock Lead
Time 		Remark
300mm Test P Boron 100 10-30 775 P/P Notch 250 4일 0.12 Max 50ea
300mm Prime P Boron 100 8-12 775 P/P Notch 50 4일 0.065 Max 35

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